A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures
- 1 November 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (11A) , L1834
- https://doi.org/10.1143/jjap.26.l1834
Abstract
A novel heteroepitaxy technique, which we call electron-beam exposure epitaxy (EBE-epitaxy), has been employed in growing GaAs films on CaF2/Si(111) structures. In this method, prior to the growth of GaAs films, the surfaces of CaF2 are exposed to an electron-beam under impingement by arsenic fluxes. It has been found that thin GaAs films with excellent crystallinity and smooth surfaces can be obtained on the CaF2/Si(111) structures. It has also been found that mixing of regular (type A) and rotationally twinned (type B) crystallites does not occur in the films, but that they show preferential and dominant type A orientation which is identical to that of the CaF2.Keywords
This publication has 6 references indexed in Scilit:
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF2/Si StructuresJapanese Journal of Applied Physics, 1986
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF2 and GaAsJapanese Journal of Applied Physics, 1986
- A note on the epitaxial relationships of the BaF2/Si(111) heterostructureThin Solid Films, 1985
- Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si SubstratesJapanese Journal of Applied Physics, 1983
- Epitaxial relations in group-IIa fluoride/Si(111) heterostructuresApplied Physics Letters, 1983
- Electron-beam-induced decomposition of ion bombarded calcium fluoride surfacesJournal of Applied Physics, 1981