Channeling control for large tilt angle implantation in Si 〈100〉
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 39-44
- https://doi.org/10.1016/0168-583x(91)96132-5
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Current status of ion implantation for VLSI applicationsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Depth Profiles of Boron Atoms with Large Tilt‐Angle ImplantationsJournal of the Electrochemical Society, 1986
- Channeling of ions near the silicon 〈001〉 axisApplied Physics Letters, 1985