Substrate removal for improved performance of QWIP–LED devices grown on GaAs substrates
- 29 February 2000
- journal article
- Published by Elsevier in Infrared Physics & Technology
- Vol. 41 (1) , 51-60
- https://doi.org/10.1016/s1350-4495(99)00047-x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diodePublished by SPIE-Intl Soc Optical Eng ,1999
- Corrugated quantum well infrared photodetectors with polyimide planarization for detector array applicationsIEEE Transactions on Electron Devices, 1998
- How good is the polarization selection rule for intersubband transitions?Applied Physics Letters, 1998
- Recent progress in quantum well infrared photodetectors and focal plane arrays for IR imaging applicationsMaterials Chemistry and Physics, 1997
- Pixelless infrared imaging utilizing a p-type quantum well infrared photodetector integrated with a light emitting diodeApplied Physics Letters, 1997
- Pixelless infrared imaging deviceElectronics Letters, 1997
- Selective wet etching of a heterostructure with citric acid-hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1−xAs/InyGa1−yAs heterojunction field effect transister fabricationMaterials Science and Engineering: B, 1995
- Near-unity quantum efficiency of AlGaAs/GaAs quantum well infrared detectors using a waveguide with a doubly periodic grating couplerApplied Physics Letters, 1991
- Low-temperature operation of silicon surface-channel charge-coupled devicesIEEE Transactions on Electron Devices, 1987
- Low-Temperature Characteristics of Buried-Channel Charge-Coupled DevicesJapanese Journal of Applied Physics, 1983