Optical and electrical properties of disordered layers in GaAs crystals produced by Si+-ion implantation
- 1 May 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 182-183, 719-726
- https://doi.org/10.1016/0029-554x(81)90801-6
Abstract
No abstract availableKeywords
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