A model for the laser-stimulated oxidation of silicon
- 15 April 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (8) , 3112-3114
- https://doi.org/10.1063/1.337813
Abstract
A model is proposed to describe Si oxidation under low-power irradiation. The proposition is that the oxidation is limited by the dangling bond formation and that this formation is enhanced by localized electronic excited states created by laser photons absorbed at the interface.This publication has 9 references indexed in Scilit:
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