Modulation-doped n-type Si/SiGe with inverted interface

5 September 1994

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 65 (10) , 1248-1250
https://doi.org/10.1063/1.112085

Abstract

We report the growth of n‐type modulation‐doped Si/SiGe with the doped SiGe supply layer underneath the strained Si channel. The mobility and charge density are measured in samples with 2‐ and 3‐nm‐thick spacers using gated Hall measurements. A peak room temperature mobility of 2200 cm²/V s is measured at a sheet density of 2.5×10¹² cm⁻². The measurements indicate a clear mobility modulation especially near threshold. Our layer design allows the gate to induce a sheet charge density of up to 3.2×10¹² cm⁻², before any significant reduction in the mobility is observed.

Keywords

This publication has 5 references indexed in Scilit:

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