Effect of post-pattern annealing on the grain structure and reliability of Al-based interconnects
- 1 June 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (11) , 8330-8335
- https://doi.org/10.1063/1.362545
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Analytic model for the grain structures of near-bamboo interconnectsJournal of Applied Physics, 1994
- Microstructure based statistical model of electromigration damage in confined line metallizations in the presence of thermally induced stressesJournal of Applied Physics, 1993
- The mechanism of electromigration failure of narrow Al-2Cu-1Si thin-film interconnectsJournal of Applied Physics, 1993
- The influence of Cu precipitation on electromigration failure in Al-Cu-SiJournal of Applied Physics, 1992
- A model for the effect of line width and mechanical strength on electromigration failure of interconnects with “near-bamboo” grain structuresJournal of Materials Research, 1991
- The evolution of microstructure in Al-2 Pct Cu thin films: Precipitation, dissolution, and reprecipitationMetallurgical Transactions A, 1990
- A model for the width dependence of electromigration lifetimes in aluminum thin-film stripesApplied Physics Letters, 1980
- The threshold current density and incubation time to electromigration in gold filmsThin Solid Films, 1977
- Stress generation by electromigrationApplied Physics Letters, 1976
- Electromigration in thin aluminum films on titanium nitrideJournal of Applied Physics, 1976