Uniaxial stress dependence of current-voltage characteristics in GaAs-AlxGa1−xAs-GaAs heterojunction barriers
- 25 September 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (13) , 1336-1338
- https://doi.org/10.1063/1.101648
Abstract
Current‐voltage characteristics of nGaAs‐iAlxGa1−xAs‐nGaAs heterojunction barriers grown on (100) substrates have been measured under uniaxial stress along 〈100〉 at 77 K. The results show that thermionic emission current through longitudinal X valleys becomes dominant over Fowler–Nordheim tunneling current through Γ or transverse X valleys, as stress increases. From the stress‐dependent thermionic emission current the rate of change with stress of the band‐edge energy difference between Γ in GaAs and longitudinal X in AlGaAs is deduced to be 14±2 meV/kbar, which leads to an X‐valley shear deformation potential of 9.6±1.8 eV.Keywords
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