Monolithically integrated coplanar 75‐GHz silicon impatt oscillator
- 1 June 1988
- journal article
- research article
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 1 (4) , 117-119
- https://doi.org/10.1002/mop.4650010402
Abstract
Planar IMPATT diodes have been fabricated for W‐band operation on high‐resistivity silicon substrates. The active layers are grown by silicon molecular beam epitaxy. The diodes are monolithically integrated in a coplanar disc resonator. Good DC characteristics have been achieved. Oscillations have been detected at a frequency of 76 GHz with a continuous wave output power of about 1 mW.Keywords
This publication has 5 references indexed in Scilit:
- Millimeter-Wave Monolithic Gunn OscillatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Semiconductor Structures for 100 GHz Silicon IMPATT DiodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- X‐Ray Investigation of Boron‐ and Germanium‐Doped Silicon Epitaxial LayersJournal of the Electrochemical Society, 1984
- Monolithically integrated Gunn oscillator at 35 GHzElectronics Letters, 1984
- Design and Performance of W-Band Broad-Band Integrated Circuit MixersIEEE Transactions on Microwave Theory and Techniques, 1983