Maskless Etching of AN Using Focused Ion Beam
- 1 July 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (7A) , L526-529
- https://doi.org/10.1143/jjap.25.l526
Abstract
Maskless submicron etching of AN has been performed using ion beam assisted etching (IBAE) technique. 35 keV Ga focused ion beam and chlorine gas was used for the etching. Al target was prepared by evaporation on Si substrate. When the pressure of chlorine gas ambient was varied from 0 to 32 mTorr, the etching rate of Al exhibited a maximum value which was 4.3×10-5cm3·mA-1·min-1 at a pressure of 5 mTorr. This value was about 10 times larger than that of physical sputter etching. Chlorine contamination was found to be below detection limit by Auger analysis.Keywords
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