Maskless Ion Beam Assisted Etching of Si Using Chlorine Gas
- 1 March 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (3A) , L169-172
- https://doi.org/10.1143/jjap.24.l169
Abstract
Characteristics of maskless ion beam assisted etching of Si have been investigated as a function of chlorine gas pressure. Focused Ga ion beam was irradiated on a Si substrate in chlorine gas atmosphere at a pressure ranging from 0 to 24 mTorr. The etching rate exhibited a maximum at a pressure of 8 mTorr, the value of which was about 5 times larger than the physical sputter etching rate, and decreased at higher chlorine gas pressure. At a pressure of 8 mTorr, the chlorine atom arrival rate was about 4 times larger than the Si removal rate. This ratio suggests that Si is mainly removed by forming volatile SiCl4.Keywords
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