Characteristics of Ion Beam Assisted Etching of GaAs Using Focused Ion Beam: Dependence on Gas Pressure
- 1 June 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (6A) , L400
- https://doi.org/10.1143/jjap.23.l400
Abstract
Characteristics of maskless ion beam assisted etching of GaAs have been investigated. A focused Ga beam was irradiated on GaAs in a chlorine atmosphere. It was observed that this etching technique gives a higher etching rate than physical sputter etching without chlorine gas. The etching rate exhibited a maximum at a gas pressure of about 20 mTorr and decreased above that. By the present technique, 0.3 µm wide, 3 µm deep U-shaped grooves were formed on GaAs surface, while by physical sputter etching the grooves were V-shaped and narrow due to redeposition and/or self focusing effect.Keywords
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