Early stages in the formation of the oxide-InP(110) interface
- 3 March 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 168 (1-3) , 617-625
- https://doi.org/10.1016/0039-6028(86)90892-7
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- On the nature of oxides on InP surfacesJournal of Vacuum Science & Technology A, 1985
- Structure of the InP/SiO2 interfaceApplied Physics Letters, 1985
- Oxidation of GaAs(110): New results and modelsPhysical Review B, 1984
- Interfacial constraints on device performanceJournal of Vacuum Science & Technology B, 1984
- The oxidation of GaAs(110): A reevaluationJournal of Vacuum Science & Technology B, 1984
- Device physics and technology of III–V compoundsJournal of Vacuum Science & Technology A, 1984
- The formation of interfaces on GaAs and related semiconductors: A reassessmentSurface Science, 1983
- Analysis of native oxide films and oxide-substrate reactions on III–V semiconductors using thermochemical phase diagramsThin Solid Films, 1983
- Chemical composition and formation of thermal and anodic oxide/III–V compound semiconductor interfacesJournal of Vacuum Science and Technology, 1981
- Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InPPhysical Review B, 1978