Depth profiling of residual stress along interrupted test cuts in machined germanium crystals
- 15 January 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (2) , 891-897
- https://doi.org/10.1063/1.351310
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Micro-Raman analysis of stress in machined silicon and germaniumPrecision Engineering, 1988
- Comprehensive investigation of polish-induced surface strain in 〈100〉 and 〈111〉 GaAs and InPJournal of Applied Physics, 1988
- Raman microprobe measurements of residual strains at the interfaces of Si on quartzJournal of Materials Research, 1987
- Residual Stresses in Machined Ceramic SurfacesJournal of the American Ceramic Society, 1986
- Raman study of polish-induced surface strain in 〈100〉 GaAs and InPApplied Physics Letters, 1984
- Raman measurements of stress in silicon-on-sapphire device structuresApplied Physics Letters, 1982
- Microstrain in laser-crystallized silicon islands on fused silicaApplied Physics Letters, 1982
- The response of solids to elastic/plastic indentation. I. Stresses and residual stressesJournal of Applied Physics, 1982
- The response of solids to elastic/plastic indentation. II. Fracture initiationJournal of Applied Physics, 1982
- Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopySolid-State Electronics, 1980