Transport anisotropy in biaxially strainedLa2/3Ca1/3MnO3thin films

Due to the complex interplay of magnetic, structural, electronic, and orbital degrees of freedom, biaxial strain is known to play an essential role in the doped manganites. For coherently strained ${\mathrm{La}}_{2/3}{\mathrm{Ca}}_{1/3}{\mathrm{MnO}}_3$ thin films grown on ${\mathrm{SrTiO}}_3$ substrates, we measured the magnetotransport properties both parallel and perpendicular to the substrate and found an anomaly of the electrical transport properties. Whereas metallic behavior is found within the plane of biaxial strain, for transport perpendicular to this plane an insulating behavior and nonlinear current–voltage characteristics (IVCs) are observed. The most natural explanation of this anisotropy is a strain induced transition from an orbitally disordered ferromagnetic state to an orbitally ordered state associated with antiferromagnetic stacking of ferromagnetic manganese oxide planes.