Formation of MO+ ions from metal oxides bombarded by 10-keV Ar+ ions
- 1 January 1984
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (1) , 230-234
- https://doi.org/10.1063/1.332870
Abstract
The yields of MO+ molecular ions emitted from 26 metal oxides were measured by bombardment with argon ions accelerated at 10 kV. The yields were obtained by dividing the peak intensity of MO+ by the intensity of M+, a method which negated variations in absolute peak intensity due to surface roughness of the specimen and variations in the ion current of the primary beam. The difference in the yields of MO+ from metal oxides was investigated on the basis of their binding energies, and the following empirical expression for the yield of MO+ ions was obtained: I(MO+)/I(M+)=K(−ΔH0f×mt)n, where I(MO+) and I(M+) are the peak intensity of MO+ and M+ ions, ΔH0f the heat of formation of oxides used as a binding energy, mt the mean mass of the oxides, and K and n constants. The values of n were approximately 2, 3, and 4 for MO‐, M2O‐, and MO2‐type oxides, respectively, which was equal to the valence number of the metal atom in the oxides, calculated by assigning a valence number of −2 to oxygen.This publication has 12 references indexed in Scilit:
- Quantitative analysis of oxygen in oxygen-doped polycrystalline silicon films with ion microanalyzer.Journal of the Mass Spectrometry Society of Japan, 1982
- Empirical formula for the calculation of secondary ion yields from oxidized metal surfaces and metal oxidesSurface Science, 1977
- Quantitative Analysis of Hydrogen in Titanium with an Ion MicroanalyzerBulletin of the Chemical Society of Japan, 1977
- Automated gas chromatographic procedure to analyze volatile organics in water and biological fluidsAnalytical Chemistry, 1976
- Developments in secondary ion mass spectroscopy and applications to surface studiesSurface Science, 1975
- Primary oxygen ion implantation effects on depth profiles by secondary ion emission mass spectrometryApplied Physics Letters, 1973
- Thermodynamic approach to the quantitative interpretation of sputtered ion mass spectraAnalytical Chemistry, 1973
- A quantum-mechanical model for the ionization and excitation of atoms during sputteringSurface Science, 1973
- In-depth profiles of phosphorus ion-implanted silicon by Auger spectroscopy and secondary ion emissionSurface Science, 1972
- A New Analytical Technique for Insulating Materials by Means of an Ion MicroanalyzerJournal of the Mass Spectrometry Society of Japan, 1972