Electrical Properties of Ion Implanted Germanium

This publication has 11 references indexed in Scilit:

• CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED SILICON
  Applied Physics Letters, 1970
• Low energy boron and phosphorus implants in silicon (a) electrical sheet measurements
  Radiation Effects, 1970
• Low energy boron and phosphorus implants in silicon (b) doping profiles
  Radiation Effects, 1970
• Effect of Ion Bombardment on the Electrical Conductivity of Germanium
  Physical Review B, 1968
• Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
  Canadian Journal of Physics, 1968
• Channeling of medium-mass ions through silicon
  Canadian Journal of Physics, 1968
• Ion implantation in semiconductors—Part I: Range distribution theory and experiments
  Proceedings of the IEEE, 1968
• A universal ion source for tandem accelerators
  Nuclear Instruments and Methods, 1968
• The fabrication of high quality silicon junction detectors by low energy ion implantation
  The European Physical Journal A, 1967
• Magnetoconductive correction factors for an isotropic Hall plate with point sources
  Solid-State Electronics, 1966