CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED SILICON

1 January 1970

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 16 (1) , 13-15
https://doi.org/10.1063/1.1653013

Abstract

Sheet‐resistivity and Hall‐effect measurements on ion‐implanted silicon wafers have been performed. Carrier concentration profiles over the range of about 10¹⁹–10¹¹ carriers/cm³ have been obtained for implants of 10¹⁴ ions/cm² of ¹¹B, ²⁷Al, and ³¹P. Three regions, due to different penetration mechanisms, can be clearly distinguished: the amorphous range, the channeling range, and the supertail. Some indication for a kinetic substitution mechanism is seen in the channeling region.

Keywords

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