Diffusion of manganese in silicon studied by deep-level transient spectroscopy and tracer measurements

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Abstract
The diffusion of manganese in silicon was studied in the temperature range 900–1200 °C by deep-level transient spectroscopy and the tracer method, with particular emphasis on well-defined boundary conditions. The surface concentrations from the tracer method agree with solubility data and the concentration of electrically active interstitial manganese is found to be 60–70% of the total manganese concentration. Both methods yield identical diffusion coefficients which are described by an Arrhenius law, D(T)=(6.9±2.2)×10−4 cm2 s−1 exp [(−0.63±0.03)eV/kT].