Backscattering analysis of electron-beam-induced diffusion of tin in GaAs from dopant emulsions
- 1 September 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (5) , 1778-1781
- https://doi.org/10.1063/1.339555
Abstract
A scanned electron beam was used to diffuse tin in GaAs from doped emulsions. Rutherford backscattering method was used to investigate the results of the diffusion. The diffusion was greatly enhanced by capping the emulsion with evaporated silicon dioxide.This publication has 16 references indexed in Scilit:
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