Annealing of zinc-implanted GaAs
- 15 June 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (12) , 5470-5476
- https://doi.org/10.1063/1.334823
Abstract
A study of ion‐implanted zinc in GaAs has been made using three annealing techniques: e‐beam, graphite strip heating, and furnace annealing in an arsine ambient. The highest hole concentrations, 7–8×1019 cm−3, were obtained using electron‐beam annealing. Graphite strip heating and electron‐beam annealing were able to electrically activate 100% of the implanted dose. The effect of strain on the activation of the zinc has been demonstrated by comparing chemical‐vapor‐deposited Si3N4 with reactively evaporated AlN encapsulants.This publication has 49 references indexed in Scilit:
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