Spin resonance of inversion-layer electrons in silicon

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Abstract
Conduction-electron spin resonance at a silicon–silicon-dioxide inversion layer is reported in the thermally activated conduction regime. The sample consisted of a microstrip patch resonator and gate with contacts to the inversion layer in a van der Pauw arrangement. The major results include the absence of measurable anisotropy in the Landé splitting factor and low-temperature saturation of the susceptibility of activated carriers. Since Hall-effect measurements suggest that the sample is inhomogeneous, the results must be viewed as preliminary, however.