The fabrication and doping of single crystals of CuGaSe2
- 1 November 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 36 (1) , 152-156
- https://doi.org/10.1016/0022-0248(76)90227-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- CuInSe2/CdS heterojunction photovoltaic detectorsApplied Physics Letters, 1974
- The fabrication of p and n type single crystals of CuInSe2Journal of Crystal Growth, 1973
- Electrical properties of CuGaS2Journal of Applied Physics, 1973
- Green electroluminescence from CdS–CuGaS2 heterodiodesApplied Physics Letters, 1973
- Hybridization of the Valence Bands of I-III-CompoundsPhysical Review B, 1972
- Room-Temperature Electrical Properties of Ten I-III-VI2 SemiconductorsJournal of Applied Physics, 1972
- CuGaSe2 and AgInSe2: Preparation and properties of single crystalsJournal of Physics and Chemistry of Solids, 1966
- Zone Leveling and Crystal Growth of Peritectic CompoundsJournal of Applied Physics, 1961