EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon
- 1 March 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 96 (1-2) , 215-218
- https://doi.org/10.1016/0168-583x(94)00485-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- X-ray diffraction analysis of damage accumulation due to the nuclear energy loss of 50 keV and 1–2.2 MeV B ions implanted in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- EPR and RBS study of defects produced by MeV ion implantation into siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Accuracy in X-ray rocking-curve analysis as a necessary requirement for revealing vacancies and interstitials in regrown silicon layers amorphized by ion implantationJournal of Applied Crystallography, 1988
- Dynamical x-ray diffraction from nonuniform crystalline films: Application to x-ray rocking curve analysisJournal of Applied Physics, 1986
- EPR studies of point defect and amorphous phase production during ion implantation in SiliconRadiation Effects, 1979
- Relaxation about the vacancy in diamondJournal of Physics C: Solid State Physics, 1978
- EPR study of neutron-irradiated silicon: A positive charge state of thesplit di-interstitialPhysical Review B, 1976
- Electron paramagnetic resonance of the lattice damage in oxygen-implanted siliconJournal of Applied Physics, 1972
- Structure of multiple-vacancy (oxygen) centers in irradiated siliconRadiation Effects, 1971