Orienting Ferroelectric Films
- 14 June 2002
- journal article
- editorial
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 296 (5575) , 1975-1976
- https://doi.org/10.1126/science.1072855
Abstract
Achieving a new generation of microelectronic devices requires combining silicon with materials, such as ferroelectrics that allow the development of, for example, high density, nonvolatile memories. Ramesh and Schlom describe work ( Lee et al.) showing that a class of ferroelectrics that has been particularly challenging to grow, can be grown as a thin film on a silicon substrate with the optimal crystallographic orientation for nonvolatile ferroelectric memories.Keywords
This publication has 13 references indexed in Scilit:
- Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 Films of Uniform a -Axis Orientation on Silicon SubstratesScience, 2002
- Growth of (103) fiber-textured SrBi2Nb2O9 films on Pt-coated siliconApplied Physics Letters, 2002
- Epitaxial ferroelectric Pb(Zr, Ti)O3 thin films on Si using SrTiO3 template layersApplied Physics Letters, 2002
- Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric propertiesApplied Physics Letters, 2001
- The Physics of Ferroelectric MemoriesPhysics Today, 1998
- Ferroelectric bismuth titanate/superconductor (Y-Ba-Cu-O) thin-film heterostructures on siliconApplied Physics Letters, 1991
- Epitaxial Cuprate Superconductor/Ferroelectric HeterostructuresScience, 1991
- Epitaxial and Smooth Films of a -Axis YBa 2 Cu 3 O 7Science, 1990
- Preferentially oriented epitaxial Y-Ba-Cu-O films prepared by the ion beam sputtering methodJournal of Applied Physics, 1988
- Domain structure and polarization reversal in films of ferroelectric bismuth titanateFerroelectrics, 1972