Performance and reliability of high radiance InGaAsP/InP DH LED́s operating in the 1.15-1.5 µm wavelength region
- 1 March 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 18 (3) , 368-374
- https://doi.org/10.1109/jqe.1982.1071531
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Temperature dependence of threshold of InGaAsP/InP double-heterostructure lasers and Auger recombinationApplied Physics Letters, 1981
- Ohmic Contacts to p-GaAs with Au/Zn/Au StructureJapanese Journal of Applied Physics, 1980
- High-temperature cw operation of GaInAsP/InP lasers emitting at 1.5 μmApplied Physics Letters, 1980
- Low temperature liquid phase epitaxy growth for room-temperature cw operation of 1.55-μm InGaAsP/InP double-heterostructure laserApplied Physics Letters, 1980
- 1.11-1.67 µmIEEE Journal of Quantum Electronics, 1980
- Spectral Half-Width of Spontaneous Emission of GaInAsP Lattice-Matched to InPJapanese Journal of Applied Physics, 1979
- Anomalous Luminescence near the InGaAsP–InP Heterojunction InterfaceJapanese Journal of Applied Physics, 1979
- Composition dependence of the band gaps of In1−xGaxAs1−yPy quaternary solids lattice matched on InP substratesJournal of Applied Physics, 1978
- InGaAsP/InP d.h. l.e.d.s for fibre-optical communicationsElectronics Letters, 1978
- High-efficiency long-lived GaAlAs LED's for fiber-optical communicationsIEEE Transactions on Electron Devices, 1977