The impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper discusses the impact of noise parameter de-embedding in n-MOSFETs. A method to directly de-embed the parasitic pad effects from the measured noise parameters (minimum noise figure NF min , equivalent noise resistance R n , and optimized source reflection coefficient Γ opt ) and the impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs is presented. In addition, noise parameter de-embedding using a physically-based pad model is presented. Finally, the results of the two approaches are compared Author(s) Deen, M.J. Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada Chih-Hung ChenKeywords
This publication has 6 references indexed in Scilit:
- High frequency noise of MOSFETs. II. ExperimentsSolid-State Electronics, 1998
- High frequency noise of MOSFETs I ModelingSolid-State Electronics, 1998
- Direct calculation of metal–oxide–semiconductor field effect transistor high frequency noise parametersJournal of Vacuum Science & Technology A, 1998
- Modelling of bonding pads and their effect on the high-frequency-noise figure of polysilicon emitter bipolar junction transistorsCanadian Journal of Physics, 1996
- High-frequency noise modelling and the scaling of the noise parameters of polysilicon emitter bipolar junction transistorsCanadian Journal of Physics, 1996
- Microwave noise characterisation of poly-emitter bipolar junction transistorsElectronics Letters, 1993