Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3
- 30 April 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 46 (4) , 467-476
- https://doi.org/10.1016/s0038-1101(01)00314-8
Abstract
No abstract availableKeywords
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