High temperature stability of plasma-enhanced chemically vapour deposited titanium silicide due to two-step rapid thermal annealing
- 1 February 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 157 (1) , 135-142
- https://doi.org/10.1016/0040-6090(88)90354-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Thermal stability of TiSi2 on mono- and polycrystalline siliconJournal of Applied Physics, 1986
- Morphological degradation of TiSi2 on 〈100〉 siliconApplied Physics Letters, 1986
- Material characterization of plasma-enhanced chemical vapor deposited titanium silicideJournal of Vacuum Science & Technology B, 1986
- Titanium silicidation by halogen lamp annealingJournal of Applied Physics, 1985
- Plasma-enhanced CVD of titanium silicideJournal of Vacuum Science & Technology B, 1984
- Kinetics of TiSi2 formation by thin Ti films on SiJournal of Applied Physics, 1983
- Thin film interaction between titanium and polycrystalline siliconJournal of Applied Physics, 1980