Growth and electrical properties of epitaxial PbSexTe1−x layers

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Abstract
Epitaxial layers of PbSexTe1−x (0⩽x⩽1) have been grown on the (111) faces of cleaved BaF2 and SrF2 single crystals by vacuum deposition of the evaporated binary compounds. Structural studies indicate that the layers are single crystals with widely spaced low‐angle grain broundaries that propagate from the substrates. Due to the smaller thermal expansion of the substrate the layers are strained, except at x=0 and x=1. The functional dependence of the elastic strain on layer composition, ε∝x (1−x), and its magnitude suggest that the thermal expansion and/or elastic constants of PbSexTe1−x are nonlinear functions of x. The Hall mobilities decrease from about 1×103 cm2/V s (300 K) and 3×104 cm2/V s (77 K) at x (1−x) =0 to about 3×102 cm2/V s (300 K) and 5×103 cm2/V s (77 K) at x=0.5, apparently as a result of alloy scattering.