A 140-GHz monolithic low noise amplifier

17 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 933-934
https://doi.org/10.1109/iedm.1994.383259

Abstract

This paper presents the highest frequency MMIC amplifier ever reported using three terminal devices. It demonstrates a gain performance of 9 dB at 142 GHz for a two-stage design, which is in line of current InP-based high electron mobility transistor (HEMT) technology.<>

Keywords

This publication has 5 references indexed in Scilit:

140 GHz 0.1 mu m gate-length pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.60/Ga/sub 0.40/As/InP HEMT
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
A monolithically integrated 120-GHz InGaAs/InAlAs/InP HEMT amplifier
IEEE Microwave and Guided Wave Letters, 1994
110-120-GHz monolithic low-noise amplifiers
IEEE Journal of Solid-State Circuits, 1993
High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/analysis methodology
IEEE Transactions on Microwave Theory and Techniques, 1992
94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs
IEEE Electron Device Letters, 1990