Mid-gap states measurements of low-level boron-doped a-Si:H films
- 1 May 2000
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 266-269, 569-573
- https://doi.org/10.1016/s0022-3093(99)00847-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Effect of Low-Level Boron Doping on Transport Properties of a-Si:H and a-SiGe:H AlloysMRS Proceedings, 1989
- Detailed investigation of doping in hydrogenated amorphous silicon and germaniumPhysical Review B, 1987
- Localized states in doped amorphous siliconJournal of Non-Crystalline Solids, 1985
- Dopant and defect states in a-Si:HPhilosophical Magazine Part B, 1985
- Measurement of deep levels in hydrogenated amorphous silicon by transient voltage spectroscopyApplied Physics Letters, 1983
- Influence of Boron doping on the transport properties of A-SI : H filmsSolid State Communications, 1981
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976