Thermionic emission in bulk unipolar camel diodes
- 15 October 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (8) , 876-878
- https://doi.org/10.1063/1.95414
Abstract
An analysis of the current-voltage characteristics of bulk unipolar camel diodes in GaAs with a high doping concentration in the barrier region has concluded that current transport is close to the thermionic limit.Keywords
This publication has 13 references indexed in Scilit:
- Bulk unipolar diodes in MBE GaAsElectronics Letters, 1983
- Quantum mechanical reflection at triangular ‘‘planar-doped’’ potential barriers for transistorsJournal of Applied Physics, 1982
- Electrical properties of bulk-barrier diodesIEEE Transactions on Electron Devices, 1982
- Current transport in monolithic hot-electron structuresThin Solid Films, 1982
- Measurement of Richardson constant of GaAs Schottky barriersSolid-State Electronics, 1981
- Planar-doped barriers in GaAs by molecular beam epitaxyElectronics Letters, 1980
- A majority-carrier camel diodeApplied Physics Letters, 1979
- Monte Carlo simulation of current transport in forward-biased Schottky-barrier diodesElectronics Letters, 1976
- Diffusion near an absorbing boundarySolid-State Electronics, 1974
- Schottky-Barrier Anomalies and Interface StatesJournal of Applied Physics, 1971