Effective recombination levels in n- and p-type silicon irradiated by 4·5 MeV electrons
- 31 October 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (10) , 1103-1123
- https://doi.org/10.1016/0038-1101(73)90138-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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