Facet formation mechanism of silicon selective epitaxial layer by Si ultrahigh vacuum chemical vapor deposition
- 1 March 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 136 (1-4) , 349-354
- https://doi.org/10.1016/0022-0248(94)90438-3
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- A 'self-aligned' selective MBE technology for high-performance bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2Journal of Crystal Growth, 1992
- Selective epitaxial growth by rapid thermal processingApplied Physics Letters, 1990
- Selective growth condition in disilane gas source silicon molecular beam epitaxyApplied Physics Letters, 1988
- Model for facet and sidewall defect formation during selective epitaxial growth of (001) siliconApplied Physics Letters, 1988
- Selective silicon epitaxial growth for device-isolation technologyMicroelectronic Engineering, 1986
- Direct imaging of a novel silicon surface reconstructionPhysical Review Letters, 1985
- Selective Silicon Epitaxy and Orientation Dependence of GrowthJournal of the Electrochemical Society, 1973
- Surface Energy of Germanium and SiliconJournal of the Electrochemical Society, 1963