Thermoelastic Strain in ZnSe Films Grown on GaAs by Metalorganic Vapor Phase Epitaxy

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Abstract
It has been observed that ZnSe lattices grown on (100) GaAs by metalorganic vapor phase epitaxy deform as growth temperature increases. The lattice parameter variation corresponds to calculated thermoelastic strain due to a mismatch in the thermal expansion coefficient between ZnSe and GaAs. In-plain tensile strain in ZnSe films is found to cause a spectral position shift in photoluminescence to longer wavelengths with increasing growth temperature. This shift can be explained by the dependences of energy gap variation on thermoelastic strain.