Background doping dependence of silicon diffusion in p-type GaAs
- 13 April 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (15) , 998-1000
- https://doi.org/10.1063/1.97958
Abstract
Junction depth measurements via scanning electron microscopy and secondary ion mass spectroscopy are used to characterize silicon diffusion in GaAs crystals that contain varying amounts of zinc background doping. The zinc concentration is found to control the silicon diffusion process. A reason for this is suggested based on the shift in Fermi level with increased p‐type doping. Also, the electric field due to the p‐n junction formed at the silicon diffusion front is shown to have a large effect on the zinc background doping profile.Keywords
This publication has 11 references indexed in Scilit:
- Silicon diffusion at polycrystalline-Si/GaAs interfacesApplied Physics Letters, 1985
- Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAsPhysical Review Letters, 1985
- Effects of Be and Si on disordering of the AlAs/GaAs superlatticeApplied Physics Letters, 1985
- Disorder of an AlxGa1−xAs-GaAs superlattice by donor diffusionApplied Physics Letters, 1984
- Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and modelApplied Physics Letters, 1984
- Saturation of Si activation at high doping levels in GaAsJournal of Physics and Chemistry of Solids, 1983
- Disorder of an AlAs-GaAs superlattice by silicon implantationApplied Physics Letters, 1982
- Effect of Heat‐Treatment of GaAs Encapsulated by SiO2Journal of the Electrochemical Society, 1976
- Properties of vacancy defects in GaAs single crystalsJournal of Applied Physics, 1975
- The diffusion of silicon in gallium arsenideSolid-State Electronics, 1965