Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO/sub 2/ thin films on silicon
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 39 (6) , 2186-2191
- https://doi.org/10.1109/23.211420
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
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