Si-SiO/sub 2/ interface state generation during X-ray irradiation and during post-irradiation exposure to a hydrogen ambient (MOSFET)
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 38 (6) , 1101-1110
- https://doi.org/10.1109/23.124081
Abstract
No abstract availableThis publication has 34 references indexed in Scilit:
- Post-irradiation behavior of the interface state density and the trapped positive chargeIEEE Transactions on Nuclear Science, 1990
- Kinetics of passivation of centers at the (111) Si- interfacePhysical Review B, 1988
- Chemistry of Si-SiO2 interface trap annealingJournal of Applied Physics, 1988
- Annealing of total dose damage: redistribution of interface state density on [100], [110] and [111] orientation siliconIEEE Transactions on Nuclear Science, 1988
- Properties of SiO2 on Si after Exposure to 3:1 H 2 + N 2 and NH 3Journal of the Electrochemical Society, 1986
- A reliable approach to charge-pumping measurements in MOS transistorsIEEE Transactions on Electron Devices, 1984
- Identification of electron traps in thermal silicon dioxide filmsApplied Physics Letters, 1981
- Reaction of hydrogen with hydroxyl-free vitreous silicaJournal of Applied Physics, 1980
- Origin of Interface States and Oxide Charges Generated by Ionizing RadiationIEEE Transactions on Nuclear Science, 1976
- Hydrides and Hydroxyls in Thin Silicon Dioxide FilmsJournal of the Electrochemical Society, 1971