Analysis of MBE growth mode for GaN epilayers by RHEED

This publication has 11 references indexed in Scilit:

• In situ control of gan growth by molecular beam epitaxy
  Journal of Electronic Materials, 1997
• Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy
  Applied Physics Letters, 1996
• High-quality GaN and AlN grown by gas-source molecular beam epitaxy using ammonia as the nitrogen source
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
• Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN
  Applied Physics Letters, 1996
• Surface Reconstructions and III-V Stoichiometry: The Case of Cubic and Hexagonal GaN
  MRS Proceedings, 1996
• Temperature-mediated phase selection during growth of GaN on (111)A and (1̄1̄1̄)B GaAs substrates
  Applied Physics Letters, 1995
• In situ monitoring of reflection high-energy electron diffraction oscillation during the growth of gallium nitride films by gas-source molecular beam epitaxy
  Journal of Crystal Growth, 1995
• Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy system
  Applied Physics Letters, 1985
• Phase-Locked Epitaxy Using RHEED Intensity Oscillation
  Japanese Journal of Applied Physics, 1984
• Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurements
  Surface Science, 1974