Transient RF signals during the switching of MESFET control devices
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 39 (1) , 18-24
- https://doi.org/10.1109/22.64600
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Low distortion GaAs MESFET control components for baseband applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A monolithic DC-1.6 GHz digital attenuatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Gate slow transients in GaAs MESFETs-causes, cures, and impact on circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Modeling and design of GaAs MESFET control devices for broad-band applicationsIEEE Transactions on Microwave Theory and Techniques, 1990
- Surface influence on the conductance DLTS spectra of GaAs MESFET'sIEEE Transactions on Electron Devices, 1986
- Status of the surface and bulk parasitic effects limiting the performances of GaAs IC'sPhysica B+C, 1985
- A MESFET Variable-Capacitance Model for GaAs Integrated Circuit SimulationIEEE Transactions on Microwave Theory and Techniques, 1982