Effects of light and modulation frequency on spin-dependent trapping at silicon grain boundaries
- 1 August 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 30 (3) , 1544-1546
- https://doi.org/10.1103/physrevb.30.1544
Abstract
The effects of measurement frequency and illumination on spin-dependent trapping at trivalent silicon centers in a silicon grain boundary have been studied. Measurement frequency effects are quantitatively understood in terms of an electronic relaxation time for the traps. Illumination results suggest that most of the trivalent silicon centers in the grain boundary are in a negatively charged, diamagnetic state.Keywords
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