The electronic properties of copper-decorated twinned boundaries in silicon
- 1 December 1990
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 62 (6) , 407-415
- https://doi.org/10.1080/09500839008215543
Abstract
The electron states of copper-decorated twinned boundaries in n- and p-type silicon bicrystals are investigated by deep-level transient spectroscopy. A correlation is established with the precipitate microstructures obtained under different conditions of copper precipitation. The analysis of the data supports a model for the trapping effects of the precipitates, regarded as metallic inclusions in rectifying contact with the silicon matrix.Keywords
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