Atomically Controlled Technology for Future Si-Based Devices
- 1 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Solid State Phenomena
- Vol. 95-96, 607-616
- https://doi.org/10.4028/www.scientific.net/ssp.95-96.607
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Nanotechnology goals and challenges for electronic applicationsIEEE Transactions on Nanotechnology, 2002
- Atomically controlled processing for group IV semiconductorsSurface and Interface Analysis, 2002
- Atomic layer doping of SiGe – fundamentals and device applicationsThin Solid Films, 2000
- Stability of the dimer structure formed on Si(100) by ultraclean low-pressure chemical-vapor depositionJournal of Applied Physics, 1994
- Low-Temperature Epitaxial Growth of Si/Si1-xGex/Si Heterostructure by Chemical Vapor DepositionJapanese Journal of Applied Physics, 1994
- Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4 gasApplied Physics Letters, 1993
- Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environmentApplied Physics Letters, 1989
- Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfacesPhysical Review B, 1988
- Hydrogen adsorption on Ge(100) studied by high-resolution energy-loss spectroscopyPhysical Review B, 1986
- Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor depositionApplied Physics Letters, 1986