Electrical characteristics of GaAs grown on (Ca,Sr)F2 by molecular beam epitaxy
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 547-551
- https://doi.org/10.1016/0022-0248(87)90452-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1983
- Preparation of Carbon‐Free GaAs Surfaces: AES and RHEED AnalysisJournal of the Electrochemical Society, 1981