Transient simulation of resonant cavity enhanced heterojunction photodiodes
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (12) , 1366-1369
- https://doi.org/10.1109/68.180578
Abstract
The transient response of heterojunction photodiodes under pulse illumination has been simulated. By solving discretized time dependent drift-diffusion and Poisson equations, the local potential and carrier concentrations are computed at each time step. The device-level simulation is carried out by a circuit simulator in which localized carrier transport is modeled by circuit elements such as voltage controlled current sources, capacitors, and resistors. Results on conventional AlGaAs/GaAs and resonant cavity enhanced (RCE) GaAs/InGaAs heterojunction p-i-n photodiodes are presented. For a 10- mu m*10- mu m area detector, more than 40% bandwidth improvement along with a two-fold increase in the efficiency is predicted for RCE devices over optimized conventional photodiodes.Keywords
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