Resonant transmission in the base/collector junction of a bipolar quantum-well resonant-tunneling transistor

23 December 1991

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 59 (26) , 3413-3415
https://doi.org/10.1063/1.105692

Abstract

A new transistor effect is demonstrated in a 120 nm base, bipolar quantum-well, resonant-tunneling transistor (BiQuaRTT). In this BiQuaRTT, a strong, multiple negative differential resistance (NDR) characteristic is obtained at room temperature with high-current gain (≳50). The effect is shown to be the consequence of an asymmetric, quantum-well-base heterostructure whose shape is controlled by the base/collector bias. Changes in the quantum-well shape lead to large modulations of the transmission coefficient for quasi-thermalized minority electrons crossing the quantum-well base. In this letter, we describe the transport characteristics of these transistors, including also temperature and magnetic field dependence.

Keywords

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