Realization of a three-terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor
- 13 March 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (11) , 1034-1036
- https://doi.org/10.1063/1.101357
Abstract
A new three-terminal resonant tunneling structure in which current transport is controlled by directly modulating the potential of the quantum well is proposed and demonstrated. Typical current gains of 50 at room temperature are observed.Keywords
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