Resonant tunneling in a GaAs/AlGaAs barrier/InGaAs quantum well heterostructure

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Abstract
Resonant tunneling through a GaAs contact/double AlGaAs barrier/single InGaAs quantum well strained-layer heterostructure was investigated. The structure exhibits negative differential resistance up to 275 K due to tunneling through the first excited state of the quantum well. Comparison of the observed peak positions with theory indicates that the conduction-band offset of the AlGaAs/InGaAs heterojunction is nearly 100%. Using the magnetic field dependence of the current-voltage characteristics, we have measured the effective mass of an electron while transiting a multicomponent quantum well tunneling structure. An effective mass for electrons in the InGaAs quantum well of approximately half the bulk effective mass is obtained.