Solution growth of CuGa1−xInxS2 by the temperature difference method under controlled S vapor pressure
- 15 February 2005
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 275 (1-2) , e531-e536
- https://doi.org/10.1016/j.jcrysgro.2004.11.023
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Growth of CuInS2 crystals by a hot-press methodJournal of Crystal Growth, 2002
- Structural properties of Cu(Ga1−xInx)ySz bulk alloysJournal of Crystal Growth, 2001
- Change in Alloy Composition in Cu(Ga1-xInx)ySz after CuI or Cu2S AnnealingJapanese Journal of Applied Physics, 2000
- Chemical reaction process and the single crystal growth of CuInS2 compoundJournal of Crystal Growth, 1999
- Resonant Raman scattering and luminescence in CuInS2 crystalsJournal of Applied Physics, 1998
- Preparation of CuGaxIn1−xS2 alloys from In solutionsJournal of Crystal Growth, 1993
- The Effect of the Sulfur Pressure on the Growth of CuInS2 Single Crystals by the Gradient Freeze TechniqueJournal of the Electrochemical Society, 1993
- Electrical and Optical Properties of CuInS2 Grown by the Sintering MethodJapanese Journal of Applied Physics, 1990
- A novel method to grow large CuInS2 single crystalsJournal of Crystal Growth, 1984
- LPE Growth of CuGa1-xInxS2 on ZnSe Substrate Using a Mixture of CuGaS2 and CuInS2 as a SoluteJapanese Journal of Applied Physics, 1984